? semiconductor components industries, llc, 2012 may, 2012 ? rev. 12 1 publication order number: mmbz15vdlt1/d mmbz15vdlt1g, mmbz27vclt1g, szmmbz15vdlt1g, SZMMBZ27VCLT1G 40 watt peak power zener transient voltage suppressors sot ? 23 dual common cathode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common cathode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. the mmbz27vclt1g/SZMMBZ27VCLT1G can be used to protect a single wire communication network form emi and esd transient surge voltages. the mmbz27vclt1g/SZMMBZ27VCLT1G is recommended by the society of automotive engineers (sae), february 2000, j2411 ?single wire can network for vehicle applications? specification as a solution for transient voltage problems. specification features: ? sot ? 23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? working peak reverse voltage range ? 12.8 v, 22 v ? standard zener breakdown voltage range ? 15 v, 27 v ? peak power ? 40 w @ 1.0 ms (bidirectional), per figure 5 waveform ? esd rating of class 3b (exceeding 16 kv) per the human body model ? low leakage < 100 na ? flammability rating: ul 94 v ? o ? sz prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? pb ? free packages are available* mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 23 case 318 style 9 anode 1 3 cathode anode 2 device package shipping ? ordering information marking diagram xxx = 15d or 27c m = date code = pb ? free package 1 xxx m mmbz15vdlt1g sot ? 23 (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com mmbz15vdlt3g sot ? 23 (pb ? free) 10,000 / tape & reel mmbz27vclt1g sot ? 23 (pb ? free) 3,000 / tape & reel szmmbz15vdlt1g sot ? 23 (pb ? free) 3,000 / tape & reel szmmbz15vdlt3g sot ? 23 (pb ? free) 10,000 / tape & reel SZMMBZ27VCLT1G sot ? 23 (pb ? free) 3,000 / tape & reel (note: microdot may be in either location)
mmbz15vdlt1g, mmbz27vclt1g, szmmbz15vdlt1g, SZMMBZ27VCLT1G http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1) @ t l 25 c p pk 40 watts total power dissipation on fr ? 5 board (note 2) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction ? to ? ambient r ja 556 c/w total power dissipation on alumina substrate (note 3) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction ? to ? ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. nonrepetitive current pulse per figure 5 and derate above t a = 25 c per figure 6. 2. fr ? 5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f uni ? directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) device* device marking v rwm i r @ v rwm breakdown voltage v c @ i pp (note 5) v br v br (note 4) (v) @ i t v c i pp volts na min nom max ma v a mv/ c mmbz15vdlt1g/t3g 15d 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 (v f = 1.1 v max @ i f = 200 ma) device* device marking v rwm i r @ v rwm breakdown voltage v c @ i pp (note 5) v br v br (note 4) (v) @ i t v c i pp volts na min nom max ma v a mv/ c mmbz27vclt1g/t3g 27c 22 50 25.65 27 28.35 1.0 38 1.0 26 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. surge current waveform per figure 5 and derate per figure 6 *include sz-prefix devices where applicable.
mmbz15vdlt1g, mmbz27vclt1g, szmmbz15vdlt1g, SZMMBZ27VCLT1G http://onsemi.com 3 -40 +85 17 breakdown voltage (volts) figure 1. typical breakdown voltage versus temperature temperature ( c) +125 16 15 14 13 (v br @ i t ) +25 mmbz15vdlt1g, szmmbz15vdlt1g -55 +85 29 breakdown voltage (volts) figure 2. typical breakdown voltage versus temperature temperature ( c) +125 28 27 26 25 (v br @ i t ) +25 mmbz27vclt1g, SZMMBZ27VCLT1G typical characteristics bidirectional unidirectional bidirectional 1000 10 0.01 temperature ( c) i r (na) figure 3. typical leakage current versus temperature 100 1 0.1 -40 +85 +125 +25 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. steady state power derating curve p d , power dissipation (mw) temperature ( c) fr-5 board alumina substrate value (%) 100 50 0 01234 t, time (ms) figure 5. pulse waveform t r 10 s pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value i pp 2 peak valuei pp t p 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) figure 6. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c
mmbz15vdlt1g, mmbz27vclt1g, szmmbz15vdlt1g, SZMMBZ27VCLT1G http://onsemi.com 4 typical applications figure 7. single wire can network ecu connector 220 pf 10% gnd * single wire can transceiver c load load r load 9.09 k 1% loss of ground protection circuit v batt 47 h bus *esd protection ? mmbz27vclt1g or equivalent. may be located in each ecu (c load needs to be reduced accordingly) or at a central point near the dlc. figure is the recommended solution for transient emi/esd protection. this circuit is shown in the society of automotive engineers february, 2000 j2411 ?single wire can network for vehicle applications? specification (figure 6, page 1 1). note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration.
mmbz15vdlt1g, mmbz27vclt1g, szmmbz15vdlt1g, SZMMBZ27VCLT1G http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap style 9: pin 1. anode 2. anode 3. cathode mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbz15vdlt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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